2025/09/27 by Huang, Yupeng, Zeng, W.
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · doi:10.48550/arxiv.2509.23096
We theoretically investigate the electron tunneling in dual-gated bilayer graphene-based n/p junctions. It is shown that a band gap is introduced by tuning the gate voltage, which modifies the pseudospin polarization and breaks anti-Klein tunneling at normal incidence. Specifically, when the pseudospin polarization vectors for the propagating and evanescent wave modes on the left and right regions of the junction are orthogonal, a revival of Klein tunneling is achieved. The Berry phase associated with Klein tunneling in dual-gated bilayer graphene is not limited to π but varies with the junction parameters. Furthermore, the Klein tunneling is accompanied by a π jump in the reflection phase around the normal incidence.