2012/12/06 by Vladimir Timoshevskii, Yibin Hu, Timoshevskii, Vladimir +6
Physics and Astronomy · #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.1212.1374
8 pages, 5 figures
arxiv created 2012/12/06 · openalex publication_date 2012/12/06 · arxiv updated 2012/12/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report ab initio simulations of quantum transport properties of Fe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, where on-site Coulomb interaction is explicitly taken into account by local density approximation + Hubbard U approach. We show that on-site Coulomb repulsion in the iron-oxygen layer can cause a dramatic drop of the tunnel magnetoresistance of the system. We present an understanding of microscopic details of this phenomenon, connecting it to localization of the Fermi electrons of particular symmetry, which takes place in the buffer Fe-O layer, when on-site Coulomb repulsion is introduced. We further study the possible influence of the symmetry reduction in the buffer Fe-O layer on the transport properties of the Fe/MgO/Fe interface.