2019/03/19 by Cora M. Went, Went, Cora M., Joeson Wong +9
Engineering · Materials Science · #2D Materials and Applications #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Molecular Junctions and Nanostructures
paper · pdf · doi:10.48550/arxiv.1903.08191
openalex publication_date 2019/03/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Two-dimensional transition metal dichalcogenides are promising candidates for\nultrathin optoelectronic devices due to their high absorption coefficients and\nintrinsically passivated surfaces. To maintain these near-perfect surfaces,\nrecent research has focused on fabricating contacts that limit Fermi-level\npinning at the metal-semiconductor interface. Here, we develop a new, simple\nprocedure for transferring metal contacts that does not require aligned\nlithography. Using this technique, we fabricate vertical Schottky-junction\nWS2 solar cells with Ag and Au as asymmetric work function contacts. Under\nlaser illumination, we observe rectifying behavior and open-circuit voltage\nabove 500 mV in devices with transferred contacts, in contrast to resistive\nbehavior and open-circuit voltage below 15 mV in devices with evaporated\ncontacts. One-sun measurements and device simulation results indicate that this\nmetal transfer process could enable high-specific-power vertical\nSchottky-junction transition metal dichalcogenide photovoltaics, and we\nanticipate that this technique will lead to advances for two-dimensional\ndevices more broadly.\n