2024/05/23 by E. Annelise Bergeron, F. Sfigakis, Bergeron, E. Annelise +17
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2405.14138
openalex publication_date 2024/05/23 · openalex created_date 2024/05/25 · openalex updated_date 2026/07/28
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor ν=2 in magnetic fields of up to B = 18 T, at electron densities up to 8× 1011 /cm2. Peak mobility is 11,000 cm2/Vs at 2× 1012 /cm2. Large Rashba spin-orbit coefficients up to 124 meV⋅Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78-99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages Ic RN up to 870 μV and critical current densities up to 9.6 μA/μm, among the largest values reported for Nb-InAs SNS devices.