2024/02/06 by Jingwei Li, Li, Jingwei, Ruixuan Wang +5
Engineering · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices
paper · pdf · doi:10.48550/arxiv.2402.04026
openalex publication_date 2024/02/06 · openalex created_date 2024/02/08 · openalex updated_date 2026/07/28
The existing silicon-carbide-on-insulator photonic platform utilizes a thin layer of silicon dioxide under silicon carbide to provide optical confinement and mode isolation. Here, we replace the underneath silicon dioxide layer with a 1-μm-thick aluminum nitride and demonstrate a 4H-silicon-carbide-on-aluminum-nitride integrated photonics platform for the first time. Efficient grating couplers, low-loss waveguides, and compact microring resonators with intrinsic quality factors up to 210,000 are fabricated. In addition, by undercutting the aluminum nitride layer, the intrinsic quality factor of the silicon carbide microring is improved by nearly one order of magnitude (1.8 million). Finally, an optical pump-probe method is developed to measure the thermal conductivity of the aluminum nitride layer, which is estimated to be over 30 times of that of silicon dioxide.