2009/04/27 by M. Kugler, Till F. M. Andlauer, Kugler, M. +26
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0904.4111
8 pages, 7 figures
openalex publication_date 2009/04/27 · arxiv created 2009/07/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al0.3Ga0.7As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.