2025/01/01 by Zhi Yan, Yan, Zhi, Xujin Zhang +7
Materials Science · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Multiferroics and related materials
paper · pdf · doi:10.48550/arxiv.2501.00761
openalex publication_date 2025/01/01 · openalex created_date 2025/01/04 · openalex updated_date 2026/07/28
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically controlled vdW-MFTJ based on a \(CrBr3/MnPSe3/CrBr3\) vertical heterostructure, which achieves ferroelectric polarization reversal without relying on atomic migration driven by inversion symmetry breaking. Using first-principles calculations, we investigate the spin-polarized quantum transport properties of the proposed structure. By integrating asymmetric PtTe2/alkali-metal (Li/Na/K)-doped/intercalated CrBr3 electrodes, the device demonstrates exceptional performance, with a maximum tunneling magnetoresistance (TMR) exceeding 8.1×105% and tunneling electroresistance (TER) reaching 2499%, while the spin-filtering channels can be flexibly controlled by the magnetization direction of the magnetic free layer, achieving perfect spin-filtering over a broad bias voltage range. Applying an external bias voltage further enhances these metrics, increasing TMR to 3.6× 107% and TER to 9990%. Notably, a pronounced negative differential resistance (NDR) effect is observed, yielding an unprecedented peak-to-valley ratio (PVR) of 9.55×109%, representing the highest value reported for vertical tunnel junctions. These extraordinary characteristics highlight the potential of vdW-MFTJs for ultra-efficient electronic switching, a key feature for next-generation spintronic devices. Our findings provide a solid theoretical foundation for designing and developing high-performance magnetic storage and logic technologies.