On the origin of near infrared photoluminescence in Bismuth-doped aluminosilicate glass

2015/12/06 by O. V. Laguta, Laguta, O. V., B. I. Denker +7
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1512.01762

5 pages, 4 figures

arxiv created 2015/12/08 · arxiv updated 2015/12/09

Abstract

The near infrared (NIR) photoluminescence (PL) in Bismuth-doped aluminosilicate glasses was reported about of 16 years ago. Although it has since been developed various kinds of fiber lasers and amplifiers based on the Bismuth-doped silica glasses, the main problem, namely the nature of NIR PL, remains unsolved. Here we show that this famous NIR PL in Bismuth-doped aluminosilicate glass originates from the defect, most probably positively charged oxygen vacancy V_O²⁺ in the glass network. This defect interacts with Bi⁺ ion in its environment via the energy transfer.

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