2011/08/04 by Miguel Moreno, M. Moreno, Moreno, M. +2
Engineering · Materials Science · Physics and Astronomy · #Advanced Chemical Physics Studies #Boron and Carbon Nanomaterials Research #Chalcogenide Semiconductor Thin Films #Chemical Physics (physics.chem-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.mes-hall #cond-mat.mtrl-sci #cond-mat.str-el #physics.chem-ph
paper · pdf · doi:10.48550/arxiv.1108.1166
3 figures, 1 table
arxiv created 2011/08/04 · openalex publication_date 2011/08/04 · arxiv updated 2011/08/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn 2p core-level photoemission. The composite material is found to belong to the special class of materials with negative charge-transfer energy (delta). As such, its metallic or insulating/semiconducting behavior depends on the strength of the p-d hybridization (affected by strain) relative to the (size-dependent) p-bandwidth. Whereas internal strain in the embedded clusters counteracts gap opening, a metal-to-semiconductor transition is expected to occur for decreasing cluster size, associated to the opening of a small gap of p-p type (covalent gap). The electronic properties of homogeneous and phase-separated (Ga,Mn)As materials are analyzed, with emphasis on the nature of their metal-insulator transitions.