2020/09/16 by Tanmay Mahanta, Sanjeev Kumar, Mahanta, Tanmay +5
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Graphene research and applications #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci) #Radiation Effects in Electronics
paper · pdf · doi:10.48550/arxiv.2009.07725
openalex publication_date 2020/09/16 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
In this work, the effect of the ion fluence-dependent defect formation on the\nmodification of surface electronic and optical properties of graphene has been\ninvestigated. The chemical vapor deposited (CVD) graphene was irradiated with\nswift heavy ion (SHI) (70 MeV Si+5) beam at different fluence to study the\ndefect formation mechanism and the role of it in modulating its surface\nelectronic property such as work function. At low ion dose, acceptor doping via\nvacancy creation was observed; whereas dense electronic excitation dominated\nextended defects was realized at higher dose, which subsequently transforms the\ncrystalline graphene into amorphous carbon. The results from UV-Vis\nspectroscopy, Raman spectroscopy and scanning Kelvin probe microscopy (SKPM)\nsupport the fact. Thus a new pathway of transformation of graphene under SHI\nirradiation was explored where ion dose could be the main factor to realize\nseveral effects in graphene.\n