Four wave mixing study on coalescence overgrowth of GaN nanocolumns on sapphire

2010/01/12 by Hsiang-Chen Wang, Hsiang‐Chen Wang, Chun-Ming Yeh +11
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optical Coatings and Gratings #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1001.1792

19 pages, 6 figures

arxiv created 2010/01/12 · openalex publication_date 2010/01/12 · arxiv updated 2010/01/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Coalescence overgrowth of pattern-grown GaN nanocolumns (NC) on c-plane sapphire substrate with metal organic chemical vapour deposition is demonstrated. The subsequent coalescence overgrowth opens a possibility for dislocation reduction due to the lateral strain relaxation in columnar geometry. We present further growth optimization and innovative characterization of MOCVD layers, overgrown on the columnar structure with varying diameter of colums. Nanoimprint lithography was applied to open circular holes of 250, 300, 450, 600 nm in diameter on the SiO2 layer, deposited on the GaN layer on c-plane sapphire template.

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