2012/02/16 by Fabrizio Buscemi, Enrico Piccinini, Buscemi, Fabrizio +7
Engineering · Materials Science · #Chalcogenide Semiconductor Thin Films #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Phase-change materials and chalcogenides #Solid-state spectroscopy and crystallography
paper · pdf · doi:10.48550/arxiv.1202.3608
openalex publication_date 2012/02/16 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb2Te5.