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A Physical Unclonable Function with Redox-based Nanoionic Resistive Memory

2016/11/15 by Jeeson Kim, Taimur Ahmed, Kim, Jeeson +15
Computer Science · Engineering · Neuroscience · #Advanced Memory and Neural Computing #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Neuroscience and Neural Engineering #Other Condensed Matter (cond-mat.other) #Physical Unclonable Functions (PUFs) and Hardware Security

paper · pdf · doi:10.48550/arxiv.1611.04665

openalex publication_date 2016/11/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

A unique set of characteristics are packed in emerging nonvolatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) such as their underlying stochastic switching processes alongside their intrinsic highly nonlinear current-voltage characteristic, which in addition to known nano-fabrication process variation make them a promising candidate for the next generation of low-cost, low-power, tiny and secure Physically Unclonable Functions (PUFs). This paper takes advantage of this otherwise disadvantageous ReRAM feature using a combination of novel architectural and peripheral circuitry. We present a physical one-way function, nonlinear resistive Physical Unclonable Function (nrPUF), potentially applicable in variety of cyber-physical security applications given its performance characteristics. We experimentally verified performance of Valency Change Mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to a massive pool of Challenge-Response Pairs (CRPs), using a combination of experimental and simulation, our proposed PUF shows a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.

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