Fractional Quantum Anomalous Hall Effect in a Graphene Moire Superlattice

2023/09/29 by Zhengguang Lu, Lu, Zhengguang, Tonghang Han +17 · 87 citations
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Topological Materials and Phenomena

paper · pdf · doi:10.48550/arxiv.2309.17436

openalex publication_date 2023/09/29 · openalex created_date 2023/10/03 · openalex updated_date 2026/07/30

Abstract

The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The demonstration of FQAHE could lead to non-Abelian anyons which form the basis of topological quantum computation. So far, FQAHE has been observed only in twisted MoTe2 (t-MoTe2) at moire filling factor v > 1/2. Graphene-based moire superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moire superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance Rxy = h/(ve²) at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moire superlattice respectively. These features are accompanied by clear dips in the longitudinal resistance Rxx. In addition, at zero magnetic field, Rxy equals 2h/e² at v = 1/2 and varies linearly with the filling factor-similar to the composite Fermi liquid (CFL) in the half-filled lowest Landau level at high magnetic fields. By tuning the gate displacement field D and v, we observed phase transitions from CFL and FQAH states to other correlated electron states. Our graphene system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field, especially considering a lateral junction between FQAHE and superconducting regions in the same device.

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Related

• EQAHMainfiguredata
• Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices
• Fractional quantum anomalous Hall effects in rhombohedral multilayer graphene in the moiréless limit and in Coulomb imprinted superlattice
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