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My, and others', spiking memristors are true memristors: a response to R.S. Williams' question at the New Memory Paradigms: Memristive Phenomena and Neuromorphic Applications Faraday Discussion

2018/12/14 by Ella Gale, Gale, Ella M.
Engineering · Neuroscience · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #Emerging Technologies (cs.ET) #FOS: Computer and information sciences #FOS: Physical sciences #Neural dynamics and brain function #Neuroscience and Neural Engineering

paper · pdf · doi:10.48550/arxiv.1812.05976

openalex publication_date 2018/12/14 · openalex created_date 2018/12/22 · openalex updated_date 2026/08/01

Abstract

At the Faraday Discussion, in the paper titled `Neuromorphic computation with spiking memristors: habituation, experimental instantiation of logic gates and a novel sequence-sensitive perceptron model' it was demonstrated that a large amount of computation could be done in a sequential way using memristor current spikes (d.c. response). As these spikes are found in many memristors (possibly all), this novel approach could be highly useful for fast and reproducible memristor circuits. However, questions were raised as to whether these spikes were actually due to memristance or merely capacitance in the circuit. In this longer version of the Faraday Discussion response, as much information as is available from both published and unpublished data from my lab is marshalled together. We find that the devices are likely imperfect memristors with some capacitance, and that the spikes are related to the frequency effect seen in memristor hysteresis curves, thus are an integral part of memristance.

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