2021/02/27 by D. I. Tetelbaum, Alena Nikolskaya, Tetelbaum, D. I. +19
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2103.00317
openalex publication_date 2021/02/27 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Gallium oxide with a corundum structure (α-Ga2O3) has recently attracted great attention in view of electronic and photonic applications due to its unique properties including a wide band gap exceeding that of the most stable beta phase (\beta-Ga2O3). However, the lower thermal stability of the α-phase at ambient conditions in comparison with the \beta-phase requires careful investigation of its resistance to other external influences such as ion irradiation, ion doping, etc. In this work, the structural changes under the action of Al+ ion irradiation have been investigated for a polymorphic gallium oxide layers grown by hydride vapor phase epitaxy on c-plane sapphire and consisting predominantly of α-phase with inclusions of α(\kappa)-phase. It is established by the X-ray diffraction technique that inclusions of α(\kappa)-phase in the irradiated layer undergo the expansion along the normal to the substrate surface, while there is no a noticeable deformation for the α-phase. This speaks in favor of the different radiation tolerance of various Ga2O3 polymorphs, especially the higher radiation tolerance of the α-phase. This fact should be taken into account when utilizing ion implantation to modify gallium oxide properties in terms of development of efficient doping strategies.