2018/12/17 by Felicia Ullstad, Ullstad, Felicia, Gabriel Bioletti +15 · 1 citation
Chemical Engineering · Engineering · Materials Science · #Ammonia Synthesis and Nitrogen Reduction #Catalytic Processes in Materials Science #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1812.07160
openalex publication_date 2018/12/17 · openalex created_date 2022/08/01 · openalex updated_date 2026/07/28
A route to break molecular nitrogen (N2) under mild conditions is\ndemonstrated by N2 gas cracking on, and incorporation into, lanthanide films.\nSuccessful growth of lanthanide nitride thin films, made by evaporation of\nlanthanides in a partial N2 atmosphere at room temperature and pressure as low\nas 10-4 Torr, is confirmed using X-ray diffraction. In-situ conductance\nmeasurements of pure lanthanide thin films exposed to N2 gas show an immediate\nsurface reaction and a slower bulk reaction. Finally, we report partial\nreversal of the nitrogen incorporation in a lanthanide nitride by cycling\nvacuum and nitrogen conditions in the sample chamber.A route to break molecular\nnitrogen (N2) under mild conditions is demonstrated by N2 gas cracking on, and\nincorporation into, lanthanide films. Successful growth of lanthanide nitride\nthin films, made by evaporation of lanthanides in a partial N2 atmosphere at\nroom temperature and pressure as low as 10-4 Torr, is confirmed using X-ray\ndiffraction. Insitu conductance measurements of pure lanthanide thin films\nexposed to N2 gas show an immediate surface reaction and a slower bulk\nreaction. Finally, we report partial reversal of the nitrogen incorporation in\na lanthanide nitride by cycling vacuum and nitrogen conditions in the sample\nchamber.\n