2024/01/31 by Aleksander Bogucki, A. Łopion, Bogucki, Aleksander +11
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #FOS: Physical sciences #Machine Learning in Materials Science #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2402.00228
openalex publication_date 2024/01/31 · openalex created_date 2024/02/03 · openalex updated_date 2026/07/28
This study examines the spin-lattice relaxation rate of Mn2+ ions in strained diluted magnetic semiconductor (Cd,Mn)Te/(Cd,Mg)Te quantum wells using the optically detected magnetic resonance (ODMR) technique. By adjusting the magnesium (Mg) content in the buffer layer, we created samples with different strain levels. Our time-resolved ODMR results show that the spin-lattice relaxation time becomes faster as strain increases. We also found that the relaxation rate increases with both magnetic field and temperature, showing a power-law behavior. To understand these observations, we used a theoretical model based on six-level rate equations with non-equal level separations. This model suggests that the main factor affecting relaxation in our samples is a "direct" mechanism. The model's predictions match well with our experimental data. Overall, our findings give insights into spin-lattice relaxation in strained quantum wells and could be important for the development of future quantum and spintronic devices.