2008/10/25 by Masashi Shiraishi, Shiraishi, Masashi, Megumi Ohishi +9
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures #Other Condensed Matter (cond-mat.other) #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.0810.4592
openalex publication_date 2008/10/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Decrease of spin polarization in spintronics devices under an application of bias voltage is one of currently important problems which should be solved. We reveal unprecedented robustness of spin polarization in multi-layer graphene spin valves at room temperature. Surprisingly, the spin polarization of injected spins is constant up to a bias voltage of +2.7 V and -0.6 V in positive and negative bias voltage applications, which is dramatically superior to all spintronics devices. Our finding is induced by suppression of spin scattering due to an ideal interface formation. Furthermore, we firstly report on important accordance between theory and experiment in molecular spintronics by observing the fact that signal intensity in a local scheme is double of that in a non-local scheme as theory predicts, which provides construction of a steadfast physical basis in this field.