2003/06/03 by S. Pramanik, Sandipan Pramanik, S. bandyopadhyay +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0306082
arxiv created 2003/06/03 · openalex publication_date 2003/06/03 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We study high-field spin transport of electrons in a quasi one-dimensional channel of a GaAs gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry (Dresselhaus spin orbit coupling) and structural inversion asymmetry (Rashba spin orbit coupling). Spin dephasing length in a one dimensional channel has been found to be an order of magnitude higher than that in a two dimensional channel. This study confirms that the ideal configuration for a SPINFET is one where the ferromagnetic source and drain contacts are magnetized along the axis of the channel. The spin dephasing length in this case is about 22.5 microns at lattice temperature of 30K and 10 microns at lattice temperature of 77 K for an electric field of 2 kV/cm. Spin dephasing length has been found to be weakly dependent on the driving electric field and strongly dependent on the lattice temperature.