Dynamics of the Inductive Single-Electron Transistor

2004/06/21 by Mika Sillanpää, Mika A. Sillanpää, Leif Roschier +5
Engineering · Physics and Astronomy · #Analog and Mixed-Signal Circuit Design #FOS: Physical sciences #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0406479

4 pages, submitted to Proceedings of the Vth Rencontres de Moriond in Mesoscopic Physics

arxiv created 2004/06/21 · openalex publication_date 2004/06/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is shown that a performance challenging the best rf-SETs is foreseeable with the new device.

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