2021/05/15 by Adrian Hemmi, Huanyao Cun, Hemmi, Adrian +7
Materials Science · #2D Materials and Applications #Boron and Carbon Nanomaterials Research #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2105.07215
openalex publication_date 2021/05/15 · openalex created_date 2021/05/24 · openalex updated_date 2026/07/29
Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The growth kinetics is slower at higher temperatures and follows a tanh2 law which better fits for higher temperatures. The crystal-quality of h-BN/Pt(111) is inferred from scanning low energy electron diffraction (x-y LEED). The data indicate a strong dependence of the epitaxy on the growth temperature. The dominant structure is an aligned coincidence lattice with 10 h-BN on 9 Pt(1×1) unit cells and follows the substrate twinning at the millimeter scale.