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Optical and Magneto-optical Response of a Doped Mott Insulator

1999/07/21 by Mukul S. Laad, M. S. Laad, Laad, Mukul S. +6
Engineering · Physics and Astronomy · #Advanced Fiber Optic Sensors #FOS: Physical sciences #Magneto-Optical Properties and Applications #Semiconductor Lasers and Optical Devices #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/9907328

6 pages, 4 figures, submitted to PRB

arxiv created 1999/07/21 · openalex publication_date 1999/07/21 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study the optical, Raman, and ac Hall response of the doped Mott insulator within the dynamical mean-field theory (d=∞) for strongly correlated electron systems. The occurence of the \it isosbectic point in the optical conductivity is shown to be associated with the frequency dependence of the generalized charge susceptibility. We compute the Raman response, which probes the fluctuations of the "stress tensor", and show that the scattering is characterized by appreciable incoherent contributions. The calculated ac Hall constant and Hall angle also exhibit the isosbectic points. These results are also compared with those obtained for a \it non-FL metal in d=∞. The role of low-energy coherence (FL) or incoherence (non-FL) in determining the finite frequency response of strongly correlated metals in d=∞ is discussed in detail.

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