2024/08/26 by Zhanbo Xia, Xia, Zhanbo, Chandan Joishi +11
Engineering · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #GaN-based semiconductor devices and materials #Radio Frequency Integrated Circuit Design #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2408.14363
openalex publication_date 2024/08/26 · openalex created_date 2024/09/21 · openalex updated_date 2026/07/28
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design maneuvers minority carrier injection through a thin p-GaN base region, while the majority carrier holes for base current are injected from thick p-GaN regions adjacent to the thin p-GaN base. The design is realized using a regrowth emitter approach with SiO2 as a spacer between the emitter layer and the thick p-GaN base contact regions. The fabricated device demonstrated state-of-art output current density (IC, max) ~275 kA/cm2 with a current gain (β) of 9, and 17 for the planar HBT design (IC, max =150 kA/cm2). The reported results highlight the potential of the selective injection design to overcome the persistent GaN HBT design tradeoff between base resistance and current gain, paving the way for next-generation radio frequency and mm-Wave applications.