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Dopant-Induced Local Pairing Inhomogeneity in Bi2Sr2CaCu2O8+δ

2005/08/26 by Jian-Xin Zhu, Jian‐Xin Zhu, Zhu, Jian-Xin
Materials Science · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Physics of Superconductivity and Magnetism #Superconductivity (cond-mat.supr-con) #cond-mat.dis-nn #cond-mat.supr-con

paper · pdf · doi:10.48550/arxiv.cond-mat/0508646

5 pages, 5 figures embedded

openalex publication_date 2005/08/26 · arxiv created 2005/09/14 · arxiv updated 2009/12/01 · openalex created_date 2024/04/10 · openalex updated_date 2026/07/28

Abstract

A new theoretical model is presented to study the nanoscale electronic inhomogeneity in high-Tc cuprates. In this model, we argue that the randomly distributed out-of-plane interstitial oxygen dopants induces locally the off-diagonal (i.e., hopping integral) disorder. This disorder modulates the superexchange interaction resulting from a large-U Hubbard model, which in turns changes the local pairing interaction. The microscopic self-consistent calculations shows that the large gap regions are registered to the locations of dopants. Large gap regions exhibit small and broader coherence peaks. These results are qualitatively consistent with recent STM observations on optimally doped Bi2Sr2CaCu2O8+δ.

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