2015/06/23 by Hasnain Ahmad, Ahmad, Hasnain, Jayasimha Atulasimha +3
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Multiferroics and related materials
paper · pdf · doi:10.48550/arxiv.1506.06838
openalex publication_date 2015/06/23 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically.