Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer

2023/10/15 by V. Ryzhii, Ryzhii, V., M. S. Shur +9
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Plasmonic and Surface Plasmon Research #Superconducting and THz Device Technology

paper · pdf · doi:10.48550/arxiv.2310.09741

openalex publication_date 2023/10/15 · openalex created_date 2023/10/18 · openalex updated_date 2026/08/01

Abstract

We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference between the signal received by the FET source and drain substantially affects the plasmonic resonances. This results in a resonant variation of the detector response on the incoming THz signal phase shift and the THz radiation angle of incidence.

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