2015/10/03 by Zhihao Yu, Yu, Zhihao, Zhun‐Yong Ong +21 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1510.00830
openalex publication_date 2015/10/03 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-limited transport is achieved in monolayer MoS2, which is a necessary factor for electronic device applications.