2016/10/06 by Yin Sun, Sun, Yin, Xintong Zhang +9
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1610.01772
arxiv created 2016/10/06 · openalex publication_date 2016/10/06 · arxiv updated 2016/10/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Electrical properties of multi-layer graphene are subject to variations due to random interlayer alignments. In this work we reported graphene interlayer conductance without special layer aligning. Ohmic contacts between two graphene layers are observed with resistance variations of more than one order. With Raman spectroscopy we identify that the lattice angle between twisted graphene layers is the key variation source. The angular dependence and temperature dependence of the interlayer conductance suggest that a phonon assistant tunneling mechanism is valid for the interlayer transport of graphene prepared by multiple transfer process. We finally derive that the multi-layer graphene resistance shows an exponential-like distribution due to the random interlayer misalignments.