2024/11/21 by Zheng Xiang, Jun‐Wei Luo, Xiang, Ziying +3
Engineering · Physics and Astronomy · #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies
paper · pdf · doi:10.48550/arxiv.2411.14220
openalex publication_date 2024/11/21 · openalex created_date 2024/11/24 · openalex updated_date 2026/07/28
The metal-induced gap states (MIGS) are commonly believed to cause the strong Femi level pinning (FLP) in the metal-semiconductors contacts. Here, we unravel unambiguously that the dangling bonds-induced interface states play a crucial role, even comparable with MIGS. The first-principles calculations show that metal-Ge and metal-Si contacts should possess a similar FLP strength if they adopt an identical interface bonding configuration: the reconstructed bonding configuration renders Si and Ge having pinning factors of 0.16 and 0.11, respectively, and the ideal non-reconstructed bonding configuration gives them pinning factors of 0.05 and 0, respectively. We illustrate that Si favors the reconstructed bonding configuration, and Ge favors the ideal non-reconstructed bonding configuration after metal deposition. The self-passivation of the dangling bonds substantially reduces the interface gap states to give a much weaker FLP in the metal-Si contacts than in the metal-Ge contacts. We also demonstrate that the full passivation of the interface dangling bonds can further increase the pinning factor to 0.5 by further reducing the interface gap states. These findings shed new light on alleviating the Femi level pinning to lower the contact resistance for Si and emerging materials towards advanced semiconductor technology.