2009/06/29 by Kazunori Shibata, Shibata, Kazunori, Hiroaki Kakuma +3
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.0906.5244
arxiv created 2009/06/29 · arxiv updated 2009/12/01
We have investigated a contribution of the density of state (DOS) to the Mott metal-insulator transition (MIT). The MIT condition is given by the DOS, which usually requires the complicated fundamental equations. To simplify the process, we have derived a general solution of the MIT condition by an integral contains the DOS in the framework of coherent potential approximation. The formula is concise and presents the direct relationship between the MIT condition and the DOS. It is able to calculate the contribution quantitatively and to compare various DOSs analytically.