2014/05/07 by Pablo Stoliar, P. Stoliar, M. J. Sánchez +7
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Transition Metal Oxide Nanomaterials #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1405.1585
arxiv created 2014/05/07 · openalex publication_date 2014/05/07 · arxiv updated 2014/05/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.