Carrier relaxation with LO phonon decay in semiconductor quantum dots

2000/10/20 by S. A. Levetas, M. J. Godfrey, Levetas, S. A. +3
Engineering · Materials Science · Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #ZnO doping and properties #cond-mat

paper · pdf · doi:10.48550/arxiv.cond-mat/0010309

2 pages, 2 figures, for 25th International Conference on the Physics of Semiconductors, Osaka, 17-22 September 2000

arxiv created 2000/10/20 · openalex publication_date 2000/10/20 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Analysis of an exactly soluble model of phonons coupled to a carrier in a quantum dot provides a clear illustration of a phonon bottleneck to relaxation. The introduction of three-phonon interactions leads to a broad window for relaxation by the processes of LO phonon scattering and decay.

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