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Observation of Coherent Charge-State Mixing in Asymmetric Bloch Transistors

1999/05/06 by Daniel J. Flees, Flees, Daniel J., J. E. Lukens +3
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Quantum optics and atomic interactions #Semiconductor Quantum Structures and Devices #Superconductivity (cond-mat.supr-con) #cond-mat.mes-hall #cond-mat.supr-con

paper · pdf · doi:10.48550/arxiv.cond-mat/9905065

8 pages including 4 figures. Paper presented at the workshop on "Macroscopic Quantum Tunneling and Dissipation", (Naples, June 1998). To be published in Jour. Supercond

arxiv created 1999/05/06 · openalex publication_date 1999/05/06 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The reduced switching current of an excited energy-band in a Bloch transistor can be used to detect microwave-induced interband transitions. Spectroscopic measurements of the band-gap are performed by mapping the frequency dependence of the excitation threshold where the microwave photon energy and band-gap are equal. This excitation threshold also provides a probe of charge-state mixing on the island of the transistor. Any asymmetry in the junctions of the transistor makes the coherent mixing of charge-states appear as a finite gap-splitting at the electrostatic degeneracy point between states differing by one excess Cooper-pair on the island. The measured gap-splitting in an asymmetric transistor clearly demonstrates the effect.

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