2020/09/14 by Haider Al Kim, Kim, Haider Al, Sven Puchinger +3
Computer Science · Engineering · #Advanced Memory and Neural Computing #Cellular Automata and Applications #Data Structures and Algorithms (cs.DS) #FOS: Computer and information sciences #Ferroelectric and Negative Capacitance Devices #Information Theory (cs.IT)
paper · pdf · doi:10.48550/arxiv.2009.06512
openalex publication_date 2020/09/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q >2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u