2021/01/21 by Yuan Fang, Ding Wang, Fang, Yuan +31
Engineering · Physics and Astronomy · #Advanced Materials Characterization Techniques #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and interfaces #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.2101.08437
openalex publication_date 2021/01/21 · openalex created_date 2022/07/17 · openalex updated_date 2026/07/28
We report growth, electronic structure and superconductivity of ultrathin epitaxial CoSi2 films on Si(111). At low coverages, preferred islands with 2, 5 and 6 monolayers height develop, which agrees well with the surface energy calculation. We observe clear quantum well states as a result of electronic confinement and their dispersion agrees well with density functional theory calculations, indicating weak correlation effect despite strong contributions from Co 3d electrons. Ex-situ transport measurements show that superconductivity persists down to at least 10 monolayers, with reduced Tc but largely enhanced upper critical field. Our study opens up the opportunity to study the interplay between quantum confinement, interfacial symmetry breaking and superconductivity in an epitaxial silicide film, which is technologically relevant in microelectronics.