1998/07/05 by Eugene Kogan, E. Kogan, Kogan, Eugene +3
Physics and Astronomy · #Condensed Matter (cond-mat) #FOS: Physical sciences #Magnetic properties of thin films #Quantum and electron transport phenomena #Theoretical and Computational Physics #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9807069
6 pages, revtex, epsf, 3 ps figures. A typo in the final result (Eq. (23)) is corrected
openalex publication_date 1998/07/05 · arxiv created 1998/09/28 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We study temperature induced metal-insulator transition in doped ferromagnetic semiconductors, described by s-d exchange model. The transition is a result of the mobility edge movement, the disorder being due to magnetic ions spin density fluctuations. The electrons are described in the tight binding approximation. Using ideas and methods of Anderson localization theory we obtain simple formulas, which connect the mobility edge with short-range order characteristics of the magnetic subsystem -- static spin correlators. We discuss the application of the theory to several groups of novel colossal-magnetoresistance materials and include the reproduction of the paper [E. M. Kogan and M. I. Auslender, phys. stat. sol. (b) vol. 147, 613 (1988)] published by us 10 years ago.