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Tensoresistive Effect in Single Crystal Microwires of Pbte Doped with Tl

2007/07/08 by E. A. Zasavitsky, E. Zasavitsky, Zasavitsky, E.
Earth and Planetary Sciences · Physics and Astronomy · #Cold Atom Physics and Bose-Einstein Condensates #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Optical properties and cooling technologies in crystalline materials #cond-mat.mes-hall #cond-mat.mtrl-sci #nanoparticles nucleation surface interactions

paper · pdf · doi:10.48550/arxiv.0707.1124

5 pages, 2 figures

arxiv created 2007/07/08 · openalex publication_date 2007/07/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Results of room temperature measurements of tensoresistive effect of thin single crystal microwires of Pb1-xTlxTe (x=0.0000 - 0.0025, d = 5 - 20 micrometers) obtained from the melted compound of corresponding composition by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium x ~0,0025 an essential increase of tensoresistive effect (resistance changes for elastic elongations per unit length of a crystal) in comparison with nondoped samples is observed. Various mechanisms which can lead to observable anomalies, including resonance scattering are discussed. Obtained experimental results allow us to suppose that the observed peculiarities can be interpreted on the basis of model of an impurity band of Tl in PbTe.

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