2006/09/13 by Tomofumi Susaki, Susaki, T., N. Nakagawa +3
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.cond-mat/0609315
openalex publication_date 2006/09/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky barrier under no magnetic field, while those of the oxygen deficient junction remarkably deviate from such a simple behavior as magnetic field is applied. These results indicate a new form of magnetoresistance arising from magnetic field changes of the interface band diagram via the strong electron-spin coupling in manganites.