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Fermi level pinning by defects can explain the large reported carbon 1s binding energy variations in diamond

2019/02/08 by Michael Walter, Walter, Michael, Filippo Mangolini +7
Engineering · Materials Science · #Boron and Carbon Nanomaterials Research #Chemical Physics (physics.chem-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Ion-surface interactions and analysis #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.1902.02958

openalex publication_date 2019/02/08 · openalex created_date 2019/05/29 · openalex updated_date 2026/07/28

Abstract

The quantitative evaluation of the carbon hybridization state by X-ray photoelectron spectroscopy (XPS) has been a surface-analysis problem for the last three decades due to the challenges associated with the unambiguous identification of the characteristic binding energy values for sp2 and sp3-bonded carbon. While the sp2 binding energy is well established, there is disagreement for the sp3 value in the literature. Here, we compute the binding energy values for model structures of pure and doped-diamond using density functional theory. The simulation results indicate that the large band-gap of diamond allows defects to pin the Fermi level, which results in large variations of the C(1s) core electron energies for sp3-bonded carbon, in agreement with the broad range of experimental C(1s) binding energy values for sp3 carbon reported in the literature. Fermi level pinning by boron is demonstrated by experimental C(1s) binding energies of highly B-doped ultrananocrystalline diamond that are in good agreement to simulations.

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