Short-range defects contribution to the monolayer graphene resistivity

2011/11/03 by N. E. Firsova, Natalie E. Firsova, Firsova, Natalie E. +3
Materials Science · Physics and Astronomy · #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.1111.0943

arxiv created 2011/11/03 · openalex publication_date 2011/11/03 · arxiv updated 2011/11/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The derived by us earlier electron scattering matrix for the short-range defects in monolayer graphene is applyed to description of the resistivity electron density dependence. It is argued that large charged defect density is unlikely in the suspended graphene and graphene lying above the trench.

Related

• Electron scattering by short range defects and resistivity of graphene
• Extraction of the short-range defect potential parameters from available experimental data on the graphene resistance
• Conductivity low-energy asymptotics for monolayer graphene
• Numbers of donors and acceptors from transport measurements in graphene
• Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers