Light emitting single electron transistors

2006/06/03 by David M.-T. Kuo, David M. -T. Kuo, Yia‐Chung Chang +3
Engineering · Physics and Astronomy · #FOS: Physical sciences #Mechanical and Optical Resonators #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mes-hall

paper · pdf · doi:10.48550/arxiv.cond-mat/0606082

10 pages, 8 figures

openalex publication_date 2006/06/03 · arxiv created 2006/06/22 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The dynamic properties of light-emitting single-electron transistors (LESETs) made from quantum dots are theoretically studied by using nonequilibrium Green's function method. Holes residing at QD created by small ac signals added in the base electrode of valence band lead to the exciton assisted tunnelling level for the electron tunnelling from emitter to collector, it is therefore such small signals can be amplified. LESETs can be employed as efficient single-photon detectors.

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