2011/08/16 by V. Dimastrodonato, Dimastrodonato, V., L. Mereni +7
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1108.3294
arxiv created 2011/08/16 · openalex publication_date 2011/08/16 · arxiv updated 2011/08/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (100). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable to those which can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1ppb level are needed to achieve high quality quantum well growth.