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Ripples in epitaxial graphene

2007/12/20 by F. Varchon, Pierre Mallet, P. Mallet +8
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0712.3394

submitted to Phys. Rev. B, figures here are in a low resolution

arxiv created 2007/12/20 · openalex publication_date 2007/12/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Graphene outstanding properties directly come from its pecular electronic structure and thus from the honeycomb lattice symmetry. The way interaction with the substrate impact this lattice is of primary importance. This is peculiarly true for epitaxial graphene because of the SiC substrate. The advantage of this system that produces macroscopic samples in registry with a substrate could turn to a major drawback if the graphene lattice reveals to be strongly distorted. Extensive ab initio calculations supported by Scanning Tunneling Microscopy experiments, demonstrate here that the substrate indeed induces a strong nanostructuration of the interface carbon layer. It propagates to the above C layer where it generates incommensurate ripples in the honeycomb lattice.

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