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Strain-enabled control of the vanadium qudit in silicon carbide

2025/01/10 by Koller, Philipp, Astner, Thomas, Tissot, Benedikt +2 · 1 citation
#FOS: Physical sciences #Quantum Physics (quant-ph)

paper · doi:10.48550/arxiv.2501.05896

Abstract

Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20 MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.

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