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Deposition of Cu2Ta4O12 by pulsed laser deposition

2003/10/07 by Andreas Heinrich, A. Heinrich, Heinrich, A. +14
Engineering · Materials Science · Physics and Astronomy · #Copper-based nanomaterials and applications #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0310155

7 pages, 9 figures, submitted to Thin Solid Films

arxiv created 2003/10/07 · openalex publication_date 2003/10/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.

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