1998/10/07 by Kiril Tsemekhman, K. Tsemekhman, V. Tsemekhman +5
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Statistical Mechanics (cond-mat.stat-mech) #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.stat-mech #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/9810076
12 pages, 6 eps figures (included), submitted to Phys. Rev. B
arxiv created 1998/10/07 · openalex publication_date 1998/10/07 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present a consistent treatment of the quantum Hall effect within the electrostatic approximation. We derive the form of the density of states (DOS) which differs from the usual gaussian shape valid for non-interacting electrons. Below a crossover temperature, this DOS gradually transforms into the non-interacting DOS near the Fermi energy. We obtain an estimate of this crossover temperature, which determines the range of validity of this framework, and allows a reconciliation of the width and temperature dependence of the quantum Hall plateaus with experiments. The DOS dramatically enhances the electron-lattice relaxation rate, thus reducing the possibility of electron overheating.