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Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures

2011/12/12 by J. Biscaras, Johan Biscaras, N. Bergeal +21
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Semiconductor materials and devices #Superconductivity (cond-mat.supr-con) #cond-mat.supr-con

paper · pdf · doi:10.48550/arxiv.1112.2633

openalex publication_date 2011/12/12 · arxiv created 2012/06/04 · arxiv updated 2012/06/05 · openalex created_date 2019/07/30 · openalex updated_date 2026/07/28

Abstract

In this letter, we show that a superconducting two-dimensional electron gas is formed at the LaTiO3/SrTiO3 interface whose transition temperature can be modulated by a back-gate voltage. The gas consists of two types of carriers : a majority of low-mobility carriers always present, and a few high-mobility ones that can be injected by electrostatic doping. The calculation of the electrons spatial distribution in the confinement potential shows that the high-mobility electrons responsible for superconductivity set at the edge of the gas whose extension can be tuned by field effect.

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