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Useful Circuit Analogies to Model THz Field Effect Transistors

2023/07/14 by Adam Gleichman, Gleichman, Adam, Kindred Griffis +3
Engineering · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Photonic and Optical Devices #Plasma Physics (physics.plasm-ph) #Plasmonic and Surface Plasmon Research

paper · pdf · doi:10.48550/arxiv.2307.07488

openalex publication_date 2023/07/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and equivalent circuit components in traditional parallel resistor, inductor, and capacitor (RLC) and transmission models for cavity structures. Verification of these models is performed using PSpice to simulate the frequency dependent voltage output and compare with analytical equations for the drain potential as a function of frequency.

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