2010/02/02 by V. Moshnyaga, Moshnyaga, V., Markus Esseling +11
Computer Science · Engineering · #Advanced Memory and Neural Computing #FOS: Physical sciences #Machine Learning and ELM #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum-Dot Cellular Automata #Strongly Correlated Electrons (cond-mat.str-el)
paper · pdf · doi:10.48550/arxiv.1002.0495
openalex publication_date 2010/02/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS) resistance occurs at a bias field ~1 MV/cm. Applied electric field drops mostly at the insulating interfacial LSMO layer and couples to correlated polarons at the LSMO(111)/LSMO(111) vertical interfaces. The observed memristance behaviour has an electronic (polaronic) origin and is caused by an electric-field-controlled Jahn-Teller (JT) effect, followed by the orbital reconstruction and formation of a metastable orbitally disordered interfacial phase (LRS). Compared to the earlier reported ionic memristor in Ti-O films, an electronic (polaronic) nano-sized LSMO memristor shows an additional (re-entrant) LRS-HRS switching at higher fields because of the second minimum in the elastic energy of a JT system.